高压IGBT MOS 晶元

Model V?CE.max, !c.max, V?GE.th, VCE(sat), (Typ.) C?ies, Good dies per wafer Die size, mm Mass production
V A V V nF
14 AP30IGB0650 650 30 APd APd APd APd 5,50 x 4,50 Now
15 AP75IGB0650 650 75 APd APd APd APd 11,0×6,0 Now
16 AP100IGB0650 650 100 APd APd APd APd 11,0×8,0 Now
17 AP150IGB0650 650 150 APd APd APd APd 10,52 x 11,50 Now
AP200IGB0650 650 200 APd APd APd
1 AP15IGB1200 1200 15 3,0 -6,0 2,2 1,1 546 5,71 x 4,53 Now
2 AP25IGB1200 1200 25 3,0 6,0 2,2 1,7 308 6,59 x 6,49 Now
3 AP50IGB1200 1200 50 3,0 6,0 2,2 3,3 139 9,08 x 8,98 Now
4 AP75IGB1200 1200 75 4,0 -7,0 2,1 4,5 102 10,12 x 10,18 Now
5 AP100IGB1200 1200 100 4,0 –7,0 2,3 10,5 54 12,70 x 12,70 Now
6 AP150IGB1200 1200 150 4,0 –7,0 2,4 12 31 15,10 x 15,10 Now
7 AP50IGB1700 1700 50 4,0 7,0 2,7 4,5 100 10,12 x 10,18 Now
8 AP75IGB1700 1700 75 4,0 -7,0 2,4 10,5 52 12,70 x 12,70 Now
9 AP100IGB1700 1700 100 4,0 -7,0 2 5,5 43 13,60 x 13,60 Now
10 AP60IGB2500 2500 75 4,0 -7,0 2 5 43 13,60 x 13,60 Now
11 AP50IGB3300 3300 50 4,0 -7,0 3,2 4,3 43 13,60 x 13,60 Now
AP100IGB3300 3300 1000 4,0 7,0 APd APd APd 2019/SEP
12 AP35IGB4500 4500 35 4,0 -7,0 3 4 38 13,60 x 13,60 Now
13 AP25IGB6500 6500 25 4,0 -7,0 3 4 29 13,60 x 13,60 Now
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